L. P. Avakyants : rechercher sur Z-Library

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Livres
Articles (52)
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Raman scattering in amorphous silicon films

L.P. Avakyants, L.L. Gerasimov, V.S. Gorelik, N.M. Manja, E.D. Obraztsova, Yu.I. Plotnikov

Journal:

Journal of Molecular Structure

Année:

1992

Langue:

english

Fichier:

PDF, 374 KB

english, 1992

A new phosphate laser glass

Avakyants, L. I., Molev, V. I., Pozdnyakov, A. E., Surkova, V. F.

Journal:

Journal of Optical Technology

Année:

2004

Langue:

english

Fichier:

PDF, 26 KB

english, 2004

Raman study of different phases in ion implanted silicon

L.P. Avakyants, E.D. Obrastsova, V.S. Gorelik

Journal:

Journal of Molecular Structure

Année:

1990

Langue:

english

Fichier:

PDF, 259 KB

english, 1990

The study of dependences of transition energies E1 and E1 + Δ1 on Hg1−xMnxTe composition by the electroreflection method

L.P Avakyants, E.I Veliyulin, A.D Efimov, A.A Mamedov

Journal:

Solid State Communications

Année:

1995

Langue:

english

Fichier:

PDF, 293 KB

english, 1995

Raman investigation of porous silicon surface during cw-laser irradiating

E.D. Obraztsova, L.P. Avakyants, G.B. Demidovich

Journal:

Journal of Electron Spectroscopy and Related Phenomena

Année:

1993

Langue:

english

Fichier:

PDF, 689 KB

english, 1993

The avalanche multiplication process in multilayer structures in relatively low electric field

G. M. Avakyants, G. S. Karayan, A. A. Dzheredzhyan, A. G. Manukyan

Journal:

physica status solidi (a)

Année:

1980

Langue:

english

Fichier:

PDF, 476 KB

english, 1980

Electroreflectance diagnostics of InGaN/AlGaN/GaN based LEDs structures

Lev Avakyants, Pavel Bokov, Anatoly Chervyakov, Alexey Chuas, Alexander Yunovich, Elena Vasileva, Boris Yavich

Journal:

physica status solidi (c)

Année:

2009

Langue:

english

Fichier:

PDF, 195 KB

english, 2009

Piezoelectric field compensation in the InGaN quantum wells of GaN/InGaN/AlGaN LEDs structures: electroreflectance experiment

Lev Avakyants, Pavel Bokov, Anatoly Chervyakov, Alexander Yunovich, Elena Vasileva, Boris Yavich

Journal:

physica status solidi (c)

Année:

2010

Langue:

english

Fichier:

PDF, 187 KB

english, 2010

Effect of γ-radiation on commercial laser glasses

I. M. Buzhinskii, L. I. Avakyants, V. F. Surkova

Journal:

Journal of Applied Spectroscopy

Année:

1974

Langue:

english

Fichier:

PDF, 196 KB

english, 1974

Ordering of the structure of hydrogenated silicon films under the influence of laser radiation

L. P. Avakyants, V. S. Gorelik, I. A. Kurova, A. V. Chervyakov

Journal:

Physics of the Solid State

Année:

1997

Langue:

english

Fichier:

PDF, 61 KB

english, 1997

Raman scattering in a near-surfacen-GaAs layer implanted with boron ions

L. P. Avakyants, V. S. Gorelik, É. M. Temper, S. M. Shcherbina

Journal:

Physics of the Solid State

Année:

1999

Langue:

english

Fichier:

PDF, 61 KB

english, 1999

Study of the effects of size quantization in coupled AlxGa1−xAs/GaAs/AlxGa1−xas quantum wells by means of photoreflectance spectroscopy

L. P. Avakyants, P. Yu. Bokov, G. B. Galiev, V. É. Kaminskii, V. A. Kul’bachinskii, V. G. Mokerov, A. V. Chervyakov

Journal:

Optics and Spectroscopy

Année:

2002

Langue:

english

Fichier:

PDF, 75 KB

english, 2002

Investigation of electronic transitions in coupled-quantum-well structures with a built-in electric field by photoreflectance spectroscopy

G. B. Galiev, V. É. Kaminskii, V. G. Mokerov, L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, V. A. Kul’bachinskii

Journal:

Semiconductors

Année:

2003

Langue:

english

Fichier:

PDF, 68 KB

english, 2003

Photoreflection studies of band offsets at the heterojunction in strained short-period GaAs/GaAsP superlattices

L. P. Avakyants, P. Yu. Bokov, T. P. Kolmakova, A. V. Chervyako

Journal:

Semiconductors

Année:

2004

Langue:

english

Fichier:

PDF, 79 KB

english, 2004

Photoreflection studies of the dopant activation in InP implanted with Be+ions

L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov

Journal:

Semiconductors

Année:

2005

Langue:

english

Fichier:

PDF, 52 KB

english, 2005

Computerized setup for double-monochromator photoreflectance spectroscopy

L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov

Journal:

Technical Physics

Année:

2005

Langue:

english

Fichier:

PDF, 44 KB

english, 2005

Raman scattering study of NaNO2-infiltrated opal photonic crystals

L. P. Avakyants, V. S. Gorelik, L. I. Zlobina, N. N. Mel’nik, P. P. Sverbil’, A. B. Fadyushin, A. V. Chervyakov

Journal:

Inorganic Materials

Année:

2006

Langue:

english

Fichier:

PDF, 210 KB

english, 2006

Raman spectroscopy determination of carrier concentration inn-InxGa1 −xAs epitaxial films

L. P. Avakyants, T. P. Kolmakova

Journal:

Inorganic Materials

Année:

2011

Langue:

english

Fichier:

PDF, 262 KB

english, 2011

Photoreflectance spectroscopy of delta-doped GaAs layers

L. P. Avakyants, P. Yu. Bokov, I. V. Bugakov, T. P. Kolmakova, A. V. Chervyakov

Journal:

Inorganic Materials

Année:

2011

Langue:

english

Fichier:

PDF, 244 KB

english, 2011

Determination of the carrier concentration in dopedn-GaAs layers by Raman and light reflection spectroscopies

L. P. Avakyants, P. Yu. Bokov, N. A. Volchkov, I. P. Kazakov, A. V. Chervyakov

Journal:

Optics and Spectroscopy

Année:

2007

Langue:

english

Fichier:

PDF, 228 KB

english, 2007

Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures

L. P. Avakyants, M. L. Badgutdinov, P. Yu. Bokov, A. V. Chervyakov, S. S. Shirokov, A. E. Yunovich, A. A. Bogdanov, E. D. Vasil’eva, D. A. Nikolaev, A. V. Feopentov

Journal:

Semiconductors

Année:

2007

Langue:

english

Fichier:

PDF, 264 KB

english, 2007

Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures

L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, A. V. Chuyas, A. E. Yunovich, E. D. Vasileva, D. A. Bauman, V. V. Uelin, B. S. Yavich

Journal:

Semiconductors

Année:

2010

Langue:

english

Fichier:

PDF, 228 KB

english, 2010

Photoreflectance spectroscopy of electron-hole states in a graded-width GaAs/InGaAs/GaAs quantum well

L. P. Avakyants, P. Yu. Bokov, E. V. Glazyrin, I. P. Kazakov, A. V. Chervyakov

Journal:

Semiconductors

Année:

2011

Langue:

english

Fichier:

PDF, 225 KB

english, 2011

Photoreflectance study of plasma-etched semi-insulating GaAs substrates treated

L. P. Avakyants, P. Yu. Bokov, A. T. Grigoriev, A. V. Chervyakov

Journal:

Bulletin of the Russian Academy of Sciences: Physics

Année:

2008

Langue:

english

Fichier:

PDF, 172 KB

english, 2008

Inelastic Light Scattering Near the Ferroelectric Phase-Transition Point in Bismuth Vanadate Crystals

L. P. Avakyants, A. V. Chervyakov, V. S. Gorelik, P. P. Sverbil'

Journal:

Journal of Russian Laser Research

Année:

2004

Langue:

english

Fichier:

PDF, 819 KB

english, 2004

The difference between reflectance and electroreflectance spectra of AlGaN/GaN/InGaN LED structures

Lev Avakyants, Artem Aslanyan, Pavel Bokov, Anatoly Chervyakov, Kirill Polozhentsev

Journal:

physica status solidi (c)

Année:

2012

Langue:

english

Fichier:

PDF, 376 KB

english, 2012

Interband optical transitions in GaAs modulation-doped quantum wells: photoreflectance experiment and self-consistent calculations

Avakyants, L P, Bokov, P Yu, Chervyakov, A V, Galiev, G B, Klimov, E A, Vasil'evskii, I S, Kulbachinskii, V A

Journal:

Semiconductor Science and Technology

Année:

2006

Langue:

english

Fichier:

PDF, 191 KB

english, 2006

SPIE Proceedings [SPIE XVI International School on Quantum Electronics: Laser Physics and Applications - Nessebar, Bulgaria (Monday 20 September 2010)] 16th International School on Quantum Electronics: Laser Physics and Applications - Photoreflectance study of indium segregation in the InGaAs quantum well

Avakyants, Lev P., Bokov, Pavel Y., Chervyakov, Avatoly V., Glazyrin, Evgeny A., Kazakov, Igor P., Dreischuh, Tanja, Slavov, Dimitar

Année:

2011

Langue:

english

Fichier:

PDF, 404 KB

english, 2011

Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths

Khabibullin, R. A., Galiev, G. B., Klimov, E. A., Ponomarev, D. S., Vasil’evskii, I. S., Kulbachinskii, V. A., Bokov, P. Yu., Avakyants, L. P., Chervyakov, A. V., Maltsev, P. P.

Journal:

Semiconductors

Année:

2013

Langue:

english

Fichier:

PDF, 276 KB

english, 2013

[IEEE 2014 International Conference Laser Optics - Saint Petersburg, Russia (2014.6.30-2014.7.4)] 2014 International Conference Laser Optics - The special aspects of neodymium and copper-containing phosphate glasses production for large-scaled disk active elements of power high-energy lasers and radiation amplifiers

Avakyants, L.I., Ignatov, A.N., Krekhova, E.Yu., Pozdnyakov, A.E., Surkova, V.F., Arbuzov, V.I., Voroshilova, M.V., Dmitryuk, A. V., Kramarev, S. I., Nikitina, S.I., Fyodorov, Yu.K.

Année:

2014

Langue:

english

Fichier:

PDF, 64 KB

english, 2014

Linear Electro-Optic Effect in Electroreflectance Spectra of AlGaN/InGaN/GaN Light Emitting Diodes Structures

Avakyants, Lev P., Aslanyan, Artem E., Bokov, Pavel Yu., Chervyakov, Anatoly V., Polozhentsev, Kirill Yu.

Journal:

Japanese Journal of Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 481 KB

english, 2013

Electroreflectance Spectra of InGaN/AlGaN/GaN p-n-Heterostructures

Yunovich, Alexander E., Avakyants, Lev, Badgutdinov, Mansur, Bokov, Pavel, Chervyakov, Anatoly, Shirokov, Stanislav, Vasileva, Elena, Feopentov, Anatoly, Snegov, Fedor, Bauman, Dmitry, Yavich, Boris

Journal:

MRS Proceedings

Année:

2006

Langue:

english

Fichier:

PDF, 135 KB

english, 2006

SPIE Proceedings [SPIE SPIE Proceedings - (Sunday 12 February 2012)] - Room temperature photoreflectance investigation of undoped and doped GaAs/AlGaAs quantum well structures

Avakyants, Lev P., Bokov, Pavel Y., Chervyakov, Anatoly V., Galiev, Galib B., Klimov, Evgeny A., Valiev, Kamil A., Orlikovsky, Alexander A.

Année:

2012

Langue:

english

Fichier:

PDF, 527 KB

english, 2012

Lasing properties of a multifiber Nd 3+ -activated glass laser

Avakyants, L I, Karpova, M L, Radchenko, V V

Journal:

Soviet Journal of Quantum Electronics

Année:

1987

Langue:

english

Fichier:

PDF, 609 KB

english, 1987

Characteristics of laser glasses (review)

Avakyants, L I, Buzhinskiĭ, I M, Koryagina, E I, Surkova, V F

Journal:

Soviet Journal of Quantum Electronics

Année:

1978

Langue:

english

Fichier:

PDF, 1.02 MB

english, 1978

Characterization of the spatial inhomogeneity of heterointerfaces in GaAs/AlGaAs quantum wells by photoreflectance spectroscopy

Avakyants, L. P., Bokov, P. Yu., Galiev, G. B., Kazakov, I. P., Chervyakov, A. V.

Journal:

Semiconductors

Année:

2015

Langue:

english

Fichier:

PDF, 318 KB

english, 2015

Neodymium- and copper-bearing phosphate glasses for fabricating large rod-shaped and disk-shaped active elements of lasers and heavy-duty high-energy radiation amplifiers

L. I. Avakyants, A. N. Ignatov, E. Y. Krekhova, A. E. Pozdnyakov, V. F. Surkova, A. V. Frolova, V. I. Arbuzov, V. M. Volynkin, A. V. Shashkin, Y. K. Fedorov

Année:

2014

Langue:

english

Fichier:

PDF, 269 KB

english, 2014

A Role of the Built-in Piezoelectric Field in InGaN/AlGaN/GaN Multiple Quantum Wells in the Electroferlectance Experiments

Bokov, Pavel, Avakyants, Lev, Badgutdinov, Mansur, Chervyakov, Anatoly, Shirokov, Stanislav, Yunovich, Alexander, Vasileva, Elena, Snegov, Feodor, Bauman, Dmitry, Yavich, Boris

Journal:

MRS Proceedings

Année:

2007

Langue:

english

Fichier:

PDF, 710 KB

english, 2007

SPIE Proceedings [SPIE Raman Scattering - Moscow, Russia (Monday 16 November 1998)] Raman Scattering - Raman scattering from phonon-plasmon modes in gallium arsenide implanted by silicon ions

Avakyants, L. P., Polyakov, P. A., Gorelik, Vladimir S., Gorelik, Vladimir S., Kudryavtseva, Anna D.

Année:

2000

Langue:

english

Fichier:

PDF, 297 KB

english, 2000

SPIE Proceedings [SPIE ALT'99 International Conference: Advanced Laser Technologies - Potenza-Lecce, Italy (Monday 20 September 1999)] ALT '99 International Conference on Advanced Laser Technologies - Characterization of electrical and structural properties of ion-implanted GaAs by Raman scattering

Avakyants, L. P., Polyakov, P. A., Gorelik, Vladimir S., Pustovoy, Vladimir I., Konov, Vitali I.

Année:

2000

Langue:

english

Fichier:

PDF, 227 KB

english, 2000

SPIE Proceedings [SPIE Fifth International Conference on Industrial Laser and Laser Applications '95 - Shatura, Moscow, Russia (Saturday 24 June 1995)] Fifth International Conference on Industrial Lasers and Laser Applications '95 - Nd:glass fiber-bundle laser for technological applications

Avakyants, L. I., Dobychin, B. M., Charikov, Alexander V., Chernyak, V. M., Panchenko, Vladislav Y., Golubev, Vladimir S.

Année:

1996

Langue:

english

Fichier:

PDF, 248 KB

english, 1996

Study of built-in electric field in active region of GaN/InGaN/AlGaNLEDs by electroreflectance spectroscopy

Avakyants, Lev P., Aslanyan, Artem E., Bokov, Pavel Yu., Chervyakov, Anatoly V., Polozhentsev, Kirill Yu.

Journal:

Solid-State Electronics

Année:

2017

Langue:

english

Fichier:

PDF, 884 KB

english, 2017

Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of ap–njunction

Avakyants, L. P., Aslanyan, A. E., Bokov, P. Yu., Polozhentsev, K. Yu., Chervyakov, A. V.

Journal:

Semiconductors

Année:

2017

Langue:

english

Fichier:

PDF, 352 KB

english, 2017

Raman scattering in InP doped by Be+-ion implantation

L. P. Avakyants,P. Yu. Bokov,A. V. Chervyakov

Journal:

Semiconductors

Année:

2017

Langue:

english

Fichier:

PDF, 343 KB

english, 2017

Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates

Avakyants, L. P., Bokov, P. Yu., Kazakov, I. P., Bazalevsky, M. A., Deev, P. M., Chervyakov, A. V.

Journal:

Semiconductors

Année:

2018

Langue:

english

Fichier:

PDF, 286 KB

english, 2018

[IEEE 2018 International Conference Laser Optics (ICLO) - Saint Petersburg, Russia (2018.6.4-2018.6.8)] 2018 International Conference Laser Optics (ICLO) - Photoreflectance Spectroscopy of Nonlinear Photonic Crystals

Svyakhovskiy, S.E., Aslanyan, A.E., Bokov, P.Yu., Chervyakov, A.V., Avakyants, L.P.

Année:

2018

Langue:

english

Fichier:

PDF, 724 KB

english, 2018

Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy

Aslanyan, A. E., Avakyants, L. P., Bokov, P. Yu., Chervyakov, A. V.

Journal:

Semiconductors

Année:

2019

Langue:

english

Fichier:

PDF, 767 KB

english, 2019

Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy

Aslanyan, A. E., Avakyants, L. P., Bokov, P. Yu., Chervyakov, A. V.

Journal:

Semiconductors

Année:

2019

Fichier:

PDF, 767 KB

2019

AIP Conference Proceedings [AIP Publishing SECOND INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE, SMART STRUCTURES AND APPLICATIONS: ICMSS-2019 - Erode, India (21–22 November 2019)] SECOND INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE, SMART STRUCTURES AND APPLICATIONS: ICMSS-2019 - The algorithm for encapsulation of service packets for building virtual network channels

Avakyants, A. V., Galushka, V. V., Urubkin, M. Y., Fathi, D. V., Fathi, V. A.

Année:

2019

Fichier:

PDF, 553 KB

2019

Investigation into the Internal Electric-Field Strength in the Active Region of InGaN/GaN-Based LED Structures with Various Numbers of Quantum Wells by Electrotransmission Spectroscopy

Aslanyan, A. E., Avakyants, L. P., Chervyakov, A. V., Turkin, A. N., Mirzai, S. S., Kureshov, V. A., Sabitov, D. R., Marmalyuk, A. A.

Journal:

Semiconductors

Année:

2020

Fichier:

PDF, 1.12 MB

2020